Deposition Equipment of the Nanofabrication Research Service Center

The Nanofabrication Research Service Center (NRSC) is a 2000 ft2 multi-user clean room facility located on the first floor of the Roy F. Mitte (RFM) building organized into five main areas where students and researchers can fabricate films, structures, and devices at the micrometer and nanometer scale. Users must enter through the gowning area that contains garments required to protect the cleanroom from particles. The class 10,000 instruction area houses high temperature furnaces, physical vapor deposition systems, wet chemical benches, chemical storage, and electrical test equipment utilized by undergraduate courses. The class 1000 research area houses deposition, etching, thermal treatment, and metrology equipment to support sponsored research and graduate coursework. The class 100 research space hosts the most sensitive lithography process equipment. The utility chase houses support equipment such as water cooling, vacuum pumps, exhaust abatement, and compressed gas delivery systems.

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  • AJA Magnetron Sputter

    Our AJA International, Inc. ATC Orion is a thin film deposition system based on physical ablation of target material by five (2RF/3DC) independently powered magnetron sputter sources.  Substrates with maximum diameter of 100mm are load lock transferred to the main chamber on a Molybdenum substrate holder with a variety of features including heating, rotation, Z motion, and RF biasing.

  • Ebeam Evaporator

    Our Angstrom Engineering EvoVac is a thin film deposition system based on the evaporation of source material that can deposit a wide range of materials including metals and inorganic compounds.  The deposition processes occur in a vacuum to permit long mean-free paths from indexed multi-pocket sources at rates and terminal thicknesses controlled using a quartz rate sensor.

  • Plasma Enhanced Atomic Layer Deposition (PEALD)

    Our plasma enhanced atomic layer deposition (PEALD) system from Arradiance utilizes high speed pulse valves to sequentially deliver reactants that combine to deposit thin films on the surface of a sample at temperatures up to 300C.  Eight precursor positions (4 metalorganic + 4 oxidizer) and three plasma gases (N2, O2, H2) enable a wide range of films and process optimization.

  • Plasma Enhanced Chemical Vapor Deposition (PECVD)

    Our plasma-enhanced chemical vapor deposition (PECVD) system from AGS utilizes plasma decomposition of silane (SiH4) in in presence of an oxygen or nitrogen source to deposit SiO2 and Si3N4 dielectric thin films.  The capacitive coupled plasma reduces the required temperature for deposition to a minimum of ~150degC.

  • Teaching Bay - PVD

    The Teaching Bay PVD systems are used to create a vacuum environment for resistive evaporation of aluminum metal onto up to four (4) 100mm diameter wafers.  The subtequent Aluminum patterning is acheived by either liftoff or etch processing to create conductive metal traces used to probe electrical charateristics of thin film devices on the wafer.

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