Thermal Analysis Equipment of the Nanofabrication Research Service Center

The Nanofabrication Research Service Center (NRSC) is a 2000 ft2 multi-user clean room facility located on the first floor of the Roy F. Mitte (RFM) building organized into five main areas where students and researchers can fabricate films, structures, and devices at the micrometer and nanometer scale. Users must enter through the gowning area that contains garments required to protect the cleanroom from particles. The class 10,000 instruction area houses high temperature furnaces, physical vapor deposition systems, wet chemical benches, chemical storage, and electrical test equipment utilized by undergraduate courses. The class 1000 research area houses deposition, etching, thermal treatment, and metrology equipment to support sponsored research and graduate coursework. The class 100 research space hosts the most sensitive lithography process equipment. The utility chase houses support equipment such as water cooling, vacuum pumps, exhaust abatement, and compressed gas delivery systems.

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  • 3-Zone Tube Furnace

    The 3-Zone tube furnace is a custom system intended for flexible annealing or chemical vapor deposition processing at temperatures < 1000oC.  Process and/or purge gases (Ar, 4%H2 in Ar, N2) are introduced via a manifold into the quartz tube at either atmospheric or sub-atmospheric pressures.  The maximum sample size is 60mm (~2"). 

  • Oxidation Furnace-Wet/Dry

    This equipment flows oxygen and water vapor into a quartz tube furnace to grow thick thermal SiO2 on silicon wafers with a maximum diameter of 100mm

  • Rapid Thermal Annealer (RTA/RTP)

    Our AGA Heatpulse 610 is a benchtop rapid thermal annealer (RTA/RTP) that utilizes high power lamps to heat treat thin films and substrates for processes such as contact formation, silicide formation, and dopant diffusion/activation.  Temperature control via PID loop has a maximum heating rate of ~50 C/s and maximum temperature of 1000 C.  The chamber can also be atmospheric purged with N2, Ar, 4% H2balAr, or O2.

  • Teaching Bay Diffusion Furnace (MRL N-Type)

    The MRL Diffusion furnaces flow oxygen (O2) and/or nitrogen (N2) into an atmospheric pressure quartz tube furnace capable of achieving temperatures up to 1100 oC.  These conditions result in the volatilization of n-type or p-type dopant species from a ceramic or spin-on-glass source.  These dopants diffuse into the surface of up to twenty-five (25) 100mm diameter silicon (Si) wafers to modify the exposed silicon carrier type, density, and junction depth.

  • Teaching Bay Diffusion Furnace (MRL P-Type)

    The MRL Diffusion furnaces flow oxygen (O2) and/or nitrogen (N2) into an atmospheric pressure quartz tube furnace capable of achieving temperatures up to 1100 oC.  These conditions result in the volatilization of n-type or p-type dopant species from a ceramic or spin-on-glass source.  These dopants diffuse into the surface of up to twenty-five (25) 100mm diameter silicon (Si) wafers to modify the exposed silicon carrier type, density, and junction depth.

  • Vacuum Oven

    Our vacuum oven is available for general sample vacuum treatments such as polymer curing or dessication.  The ultimate vacuum is ~25mmHg and the maximum temperature is 200C.

  • Wafer Bonder

    Our EVG 501 wafer bonder system applies pressure up to 10kN and temperature up to 450C to samples with prepared surfaces (specific chemical surface termination).  When the system mechanically brings these surfaces into contact the temperature and pressure sequence activates chemical bonds at the interfaces that fuse the sample surfaces together.

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